2019年翻譯資格考試初級筆譯模擬題：薄膜

　　漢譯英

　　采用真空順序蒸發(fā)銅銦金屬預置層后真空(硒化法)，以及真空三元疊層蒸發(fā)后氮氣氣氛退火的方法(疊層法)分別制備太陽電池吸收層材料CuInSe2薄膜。通過X誰信安衍射、掃描電子顯微鏡、能量色散X射線分析技術(shù)等分析手段對薄膜進行了表征。結(jié)果表明：兩種方法制備的薄膜形貌都比較致密均勻，晶粒直徑分別約1.5μm和1μm。成分分析表明所制薄膜均為富銅CIS.硒化法制備的CIS薄膜具有單一的黃銅礦相結(jié)構(gòu);而疊層法制備的薄膜含有少量雜相，如β-2In2 Se2等。因此硒化法制備的薄膜更適用于座位太陽能吸收層材料。

　　參考譯文

　　Abstract: The CuInSe 2(CIS) films were fabricated by selenization of evaporated metallic precursors and vacuum evaporation of stacked elemental layers(SEL) followed by a thermal annealing step. The morphology, microstructure and composition of the films were investigated by scanning electron microscopy(SEM), X-ray diffraction(XRD) and energy dispersive X-ray spectroscopy(EDX). The results show that these two thin films are both compact and uniform. The grain sizes of the two kinds of films are 1.5 μm and 1.0 μm, respectively.All the films made by the two methods are Cu-rich and show p-type conduction. However, the CIS thin films fabricated by the former method consist of a single phase of chalcopyrite structure, while those films fabricated by the later method contain impurity phases such as β-In 2Se 3 besides CIS phase. Thus the former method is better for fabricating the CIS absorber in solar cells.